We
examine the magnetic-field-driven
insulator–quantum-Hall–insulator
transitions of the two-dimensional hole gas in a Ge/SiGe quantum well.
We observe direct transitions between low and high magnetic-field
insulators and the ν=1 quantum Hall state. With increasing
magnetic
field, the transitions from insulating to quantum Hall and quantum Hall
to insulating are very similar with respect to their transport
properties. We address the temperature dependence around the
transitions and show that the characteristic energy scale for the
high-field transition is larger.
The
frequency dependence of microwave-induced resistance oscillations
(MIROs) has been studied experimentally in high-mobility electron GaAs∕AlGaAs
structures to explore the limits at which these oscillations can be
observed. It is found that in dc transport experiments at frequencies
above 120 GHz,
MIROs start to quench, while above 230 GHz,
they completely disappear. The results will need to be understood
theoretically but are qualitatively discussed within a model in which
forced electronic charge oscillations (plasmons) play an intermediate
role in the interaction process between the radiation and the
single-particle electron excitations between Landau levels.
In
this work we address experimentally a number of unresolved issues
related to microwave induced resistance oscillations (MIROs) leading to
the zero-resistance states observed recently on 2D electron gases in
GaAs∕AlGaAs heterostructures. We stress the importance of the
electrodynamic effects detected in both reflection and absorption
experiments, although they are not revealed in transport experiments on
very high mobility samples. We also study the exact waveform of MIROs
and their damping due to temperature. A simple equation is given, which
can be considered as phenomenological, which describes precisely the
experimental MIROs waveform. The waveform depends only on a single
parameter—the width of the Landau levels, which is related to
the
quantum lifetime. A very good correlation was found between the
temperature dependencies of the quantum lifetime from MIROs and the
transport scattering time from the electron mobility with a ratio
τtr∕τq≃20.
It is found that the prefactor in the equation for MIROs decays as 1∕T2
with the temperature which can be explained within the distribution
function model suggested by Dmitriev . The results are compared with
measurements of the Shubnikov–de Haas oscillations down to
30 mK
on the same sample.